?2001 fairchild semiconductor corporation rev. a1, june 2001 KSK211 silicon n-channel junction fet absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted i dss classification symbol parameter ratings units v gdo gate-drain voltage -18 v i g gate-current 10 ma p d power dissipation 200 mw t j junction temperature 150 c t stg storage temperature -55 ~ 125 c symbol parameter test condition min. typ. max. units i gss gate cut-off current v gs = 0.5v, v ds = 0 -10 na v(br) gdo gate-drain breakdown voltage i g = -100 a, drain -18 v i dss drain current v ds =10v, v gs =0 1.0 10 ma v gs (off) gate-source cut-off voltage v ds =10v, i d =1 a0.4 4.0v ? y fs ? forward transfer admittance v ds =10v, v gs =0, f=1khz 9ms c rss reverse transfer capacitance v gd =10v, f=1mhz 0.15 pf c ps power gain v dd =10v, f=100mhz 18 db nf noise figure v dd =10v, f=100mhz 2.5 3.5 db classification o y g i dss (ma) 1.0 ~ 3.0 2.5 ~ 6.0 5.0 ~ 10 1. drain 2. gate 3. source fm tuner vhf amplifier ? nf =2.5db (typ) ? ? y fs ? =9.0 ms (typ) KSK211 l2x marking sot-23 1 2 3
?2001 fairchild semiconductor corporation KSK211 rev. a1, june 2001 typical characteristics figure 1. static characteristic figure 2. i d -v ds figure 3. crss-v gd figure 4. yfs-v ds figure 5. i d -v gs figure 6. yfs-i d -15 -10 -5 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 v gs = -1.2v v gs = -1.0v v gs = -0.8v -0.4 v gs = 0v v gs = -0.4v v gs [v], drain-source voltage -0.8 -1.2 v gs = -0.6v v gs = 0v v gs = -0.8v v gs = -0.2v i d [ma], drain current v ds [v], drain-source voltage 012345 0 1 2 3 4 5 v gs = -1.2v v gs = -1.0v v gs = -0.8v v gs = -0.6v v gs = 0v v gs = -0.2v v gs = -0.4v i d [ma], drain current v ds [v], drain-source voltage -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0.01 0.1 1 10 100 f = 1mhz t a = 25 c rss [pf], feedback capacitance v gd [v], gate-drain voltage 468101214 0.01 0.1 1 10 100 i ds = 0.5ma i ds = 2ma i ds = 5ma (i dss ) i ds = 2ma -bfs gfs f = 100mhz t a = 25 i ds = 5ma (i dss ) y fs [ms], forward transter admittance v ds [v], drain-source voltage -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0 2 4 6 8 10 r s = 18 ? r s = 100 ? v ds = 10v t a = 25 i d [ma], drain current v gs [v], gate-source voltage 0246810 0 4 8 12 16 20 i dss = 2ma i dss = 6ma i dss = 10ma v ds = 10v f = 1khz t a = 25 ly fs l [ms], forward transfer admittance i d [ma], drain current
?2001 fairchild semiconductor corporation KSK211 rev. a1, june 2001 typical characteristics (continued) figure 7. yis-v ds figure 8. ciss-v gs figure 9. ? ? ? ? yfs ? ? ? ? -i dss figure 10. yfs, yrs-f figure 11. v gs (off)-i dss figure 12. yos-v ds 4 6 8 1012141618202224 0.01 0.1 1 10 100 i ds = 0.5ma i ds = 0.5ma i ds = 2ma i ds = 5ma (i dss ) i ds = 2ma gis bis f = 100mhz t a = 25 i ds = 5ma (i dss ) y is [ms], input admittance v ds [v], drain-source voltage -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 0.1 1 10 100 1000 v ds = 0 f = 1mhz t a = 25 c iss [pf], input capacitance v gs [v], drain-source voltage 110 1 10 100 i dss :v ds =10v v gs =0v ly fs l:v ds =10v v gs =0v f=1khz t a = 25 ly fs l [ms], forward transfer admittance i dss [ma], drain current 10 100 1000 10000 0.1 1 10 100 grs brs bfs gfs y rs [ms], reverse transfer admittance v ds =10v v gs =0v t a = 25 y fs [ms], forward transfer admittance f[mhz], frequency 110 0.1 1 10 - - - i dss :v ds = 10v v gs =0 v gs (off):v ds =10v i d = 0.1 a t a = 25 v gs (off)[v], gate-source voltage i dss [ma], drain current 4 6 8 1012141618202224 0.01 0.1 1 10 100 i ds = 0.5ma i ds = 0.5ma i ds = 2ma i ds = 5ma (i dss ) i ds = 2ma gos gfs f = 100mhz t a = 25 i ds = 5ma (i dss ) y os [ms], output admittance v ds [v], drain-source voltage
?2001 fairchild semiconductor corporation KSK211 rev. a1, june 2001 typical characteristics (continued) figure 13. yis, yos-f figure 14. power derating 10 100 1000 10000 0.1 1 10 100 bos gis bos y is [ms], input admittance bis v ds = 10v v gs = 0 t a = 25 y os [ms], output admittance f[mhz], frequency 0 25 50 75 100 125 150 175 200 225 250 0 50 100 150 200 250 p c [mw], power dissipation t c [ o c], case temperature
0.96~1.14 0.12 0.03~0.10 0.38 ref 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.023 0.20 min 0.40 0.03 sot-23 package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 KSK211 dimensions in millimeters
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